Hy1908 Mosfet Datasheet: Specifications, Features, and
Inverters: The HY1908 MOSFET is widely used in the design of inverters for renewable energy sources like solar panels and wind turbines. It allows for efficient DC to AC power conversion,
MF/PS/PM
*** Limited by TJmax, starting TJ=25°C, L = 0.5mH, RG= 25Ω, VGS=10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions
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HY1908 YYXXXJWW G Date Code Assembly Material YYXXX WW G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
HY1908P MOSFET Datasheet: N-Ch, 80V, 90A. Full specification
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility. HY1908P MOSFET PDF Datasheet: N-Ch/80V/90A. View the complete specification, pin
HY1908P/M/B/ MF /PS/PM
matte tin plate Termi- Nation finish;which are ful. y compliant with RoHS. HOOYI lead-free products meet or exceed. the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL
HY1908 | PDF | Field Effect Transistor | Diode
It has a maximum drain-source voltage of 80V, continuous drain current rating of 90A, and on-state resistance of 7.8 mΩ. The MOSFET is avalanche rated and available in TO-252-2L, TO
Hy1908 Datasheet
The HY1908 datasheet offers an array of fundamental specifications that enable efficient performance and reliable operation. This includes vital aspects such as voltage range, current
HY1908B MOSFET: N-Ch, 80V, 90A. Full datasheet with pinout
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility. HY1908B MOSFET specs: N-Ch/80V/90A. View the complete datasheet, pin configuration,
HY1908 Datasheet (PDF)
Description: N-Channel Enhancement Mode MOSFET. Manufacturer: HOOYI SEMICONDUCTOR.
HY1908PM
Key features, pinout, electrical characteristics, block diagram, and application circuit for n-channel enhancement mode mosfet.